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PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

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Studies of piezoelectric and electrostrictive properties of (1 − x)PMN-x PT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure.

Affiliations: 1: IEMN – DOAE – MIMM, UMR CNRS 8520, Université de Valenciennes et du Hainaut–Cambrésis, Le mont houy, 59313 Valenciennes Cedex 9, France; 2: Laboratory for Ferroelectric Ceramics and Application, Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China; 3: Centre for Research in Information Storage Technology, University of Plymouth, Drake Circus, Plymouth PL4 8AA, UK; 4: Laboratoire de Cristallochimie et Physico-chimie du Solide, Université Sciences et Techniques de Lille, BP 90108, Villeneuve d'Ascq Cedex, France

10.1163/156856708783623465
/content/journals/10.1163/156856708783623465
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/content/journals/10.1163/156856708783623465
2008-02-01
2016-12-03

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