Cookies Policy

This site uses cookies. By continuing to browse the site you are agreeing to our use of cookies.

I accept this policy

Find out more here

PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.

Brill’s MyBook program is exclusively available on BrillOnline Books and Journals. Students and scholars affiliated with an institution that has purchased a Brill E-Book on the BrillOnline platform automatically have access to the MyBook option for the title(s) acquired by the Library. Brill MyBook is a print-on-demand paperback copy which is sold at a favorably uniform low price.

This Article is currently unavailable for purchase.
Add to Favorites
You must be logged in to use this functionality

Studies of piezoelectric and electrostrictive properties of (1 − x)PMN-x PT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure.

Affiliations: 1: IEMN – DOAE – MIMM, UMR CNRS 8520, Université de Valenciennes et du Hainaut–Cambrésis, Le mont houy, 59313 Valenciennes Cedex 9, France; 2: Laboratory for Ferroelectric Ceramics and Application, Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China; 3: Centre for Research in Information Storage Technology, University of Plymouth, Drake Circus, Plymouth PL4 8AA, UK; 4: Laboratoire de Cristallochimie et Physico-chimie du Solide, Université Sciences et Techniques de Lille, BP 90108, Villeneuve d'Ascq Cedex, France


Full text loading...


Data & Media loading...

Article metrics loading...



Can't access your account?
  • Key

  • Full access
  • Open Access
  • Partial/No accessInformation