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Photoinduced Reaction On Quantized GaAs Nanocrystals Prepared By Wet Process

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Gallium arsenide nanocrystals of 1.5 to 9.0 nm were prepared in triethylene glycol dimethylether (triglyme), and photoinduced reduction of methylviologen (MV2+) on the nanocrystals was investigated. The rate of MV+ production determined for an initial stage of photoinduced reduction of MV2+ was found to be low compared to that determined for bulk GaAs particles of 0.4 mm, if the rate was evaluated for unit surface area of the semiconductor particles. To account for this finding, the apparent association constant of MV2+ to GaAs was determined, which suggested that molecular species which worked as stabilizing agents for the GaAs nanocrystals retarded the adsorption of MV2+ onto the particle surfaces.

Affiliations: 1: Department of Applied Chemistry, Faculty of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565, Japan; 2: Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamada-oka 2-1, Suita, Osaka 565, Japan


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